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Journal description
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Details for article 7 of 8 found articles
| Title: |
Study of defects in thermal SiO2 grown in the presence of 1,1,1-trichloroethane by Wright etchant |
| Author: |
Bhan, R.K. |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 22 () nr. 3 pages 17-29 |
| Year: |
1991 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 7 of 8 found articles
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