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Journal description
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Details for article 5 of 9 found articles
| Title: |
Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures |
| Author: |
Suñé, J. Placencia, I. Farrés, E. Barniol, N. Martin, F. Aymerich, X. |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 20 () nr. 6 pages 27-39 |
| Year: |
1989 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 9 found articles
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