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Journal description
All volumes of the corresponding journal
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Details for article 11 of 24 found articles
| Title: |
A process compatible SiC trench MOSFET integrated with double p+-polySi/SiC HJD for enhanced switching performance |
| Author: |
Zhu, Bangmin Guo, Jianbin Yang, Yuxing Wang, Yanghao Sun, Qingqing Zhang, David Wei Xu, Hang |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 161 () nr. C pages p. |
| Year: |
2025 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 24 found articles
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