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                                       Details for article 18 of 23 found articles
 
 
  Drain side pocket-based Germanium nanotube tunnel FET for low power complementary ternary inverter
 
 
Title: Drain side pocket-based Germanium nanotube tunnel FET for low power complementary ternary inverter
Author: Saini, Navneet Kaur
Kumar, Nitish
Saxena, Raghvendra Sahai
Dhawan, Anuj
Kumar, M. Jagadesh
Appeared in: Microelectronics journal
Paging: Volume 160 () nr. C pages p.
Year: 2025
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 18 of 23 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands