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Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance |
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Titel: |
Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance |
Auteur: |
Li, Lianlian Cao, Lei Zhang, Xuexiang Li, Qingkun Wu, Zhenhua Zhang, Meihe Bao, Yunjiao Wang, Peng Jiang, Renjie Du, Anyan Zhang, Qingzhu Yin, Huaxiang |
Verschenen in: |
Microelectronics journal |
Paginering: |
Jaargang 156 () nr. C pagina's p. |
Jaar: |
2025 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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