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Journal description
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Details for article 20 of 56 found articles
| Title: |
A novel Ω-SOI Gate-All-Around FET with doping free load-Si and two-step wet etching achieving superior leakage suppression and short-channel effects immunity |
| Author: |
Sun, Longyu Liu, Haoyan Wang, Xin Jia, Xiaofeng Zhang, Jiayi Li, Yongliang |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 156 () nr. C pages p. |
| Year: |
2025 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 20 of 56 found articles
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