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                                       Details for article 12 of 32 found articles
 
 
  An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer
 
 
Title: An improved 4H-SiC trench MOS barrier Schottky diode with current spreading layer and low resistance layer
Author: Ge, Hai-tao
Zhen, Wang-zi-xuan
Yu, Cheng-hao
yamamoto, Masayuki
Zhao, Wen-sheng
Guo, Hao-min
Wu, Xiao-dong
Appeared in: Microelectronics journal
Paging: Volume 154 () nr. C pages p.
Year: 2024
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 32 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands