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                                       Details for article 21 of 25 found articles
 
 
  Impacts of quantum confinement effect on threshold voltage and drain-induced barrier lowering effect of junctionless surrounding-gate nanosheet NMOSFET including source/drain depletion regions
 
 
Title: Impacts of quantum confinement effect on threshold voltage and drain-induced barrier lowering effect of junctionless surrounding-gate nanosheet NMOSFET including source/drain depletion regions
Author: Xu, Lijun
An, Linfang
Zhao, Jia
He, Yulei
Teng, Lijuan
Jiang, Yuanxing
Appeared in: Microelectronics journal
Paging: Volume 152 () nr. C pages p.
Year: 2024
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 21 of 25 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands