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  A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT
 
 
Title: A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT
Author: Meng, S.H.
Han, X.L.
Ding, P.
Mei, B.
Su, Y.B.
Zhang, J.L.
Yun, H.Q.
Jin, Z.
Zhong, Y.H.
Appeared in: Microelectronics journal
Paging: Volume 148 () nr. C pages p.
Year: 2024
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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 Koninklijke Bibliotheek - National Library of the Netherlands