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Journal description
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Details for article 22 of 23 found articles
| Title: |
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone |
| Author: |
Jebalin, I.V.Binola K Franklin, S. Angen G, Gifta P, Prajoon Nirmal, D. |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 147 () nr. C pages p. |
| Year: |
2024 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 22 of 23 found articles
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