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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 7 of 40 found articles
| Title: |
Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing |
| Author: | |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 14 () nr. 3 pages 91 |
| Year: |
1983 |
| Contents: | |
| Publisher: |
Benn Electronics Publications Ltd, Luton |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 7 of 40 found articles
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