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                                       Details for article 20 of 23 found articles
 
 
  9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device
 
 
Title: 9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device
Author: Lian, Mengxiao
Yin, Yian
Li, Jialin
Zou, Bingzhi
Zhang, Keming
Zhang, Xichen
Xie, Yafang
Wu, You
Zhang, Zhixiang
Appeared in: Microelectronics journal
Paging: Volume 137 () nr. C pages p.
Year: 2023
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 20 of 23 found articles
 
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