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                                       Details for article 19 of 24 found articles
 
 
  Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices
 
 
Title: Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices
Author: Toprak, A.
Ă–zbay, E.
Appeared in: Microelectronics journal
Paging: Volume 135 () nr. C pages p.
Year: 2023
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 19 of 24 found articles
 
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