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Journal description
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Details for article 15 of 24 found articles
| Title: |
Impact of doping concentration and recess depth to achieve enhancement mode operation in β-Ga2O3 MOSFET |
| Author: |
Sharma, Roshan Patnaik, Akash Sharma, Pankaj |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 135 () nr. C pages p. |
| Year: |
2023 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 15 of 24 found articles
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