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                                       Details for article 19 of 19 found articles
 
 
  Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region
 
 
Title: Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region
Author: Fang, Dong
Yang, Guang
Qiao, Ming
Xiao, Kui
Yang, Xiangyu
Bian, Zheng
Zhang, Bo
Appeared in: Microelectronics journal
Paging: Volume 130 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 19 of 19 found articles
 
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