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                                       Details for article 29 of 68 found articles
 
 
  Generic reliability of the high-conductivity TaSi2/n+ poly-Si gate MOS structure
 
 
Title: Generic reliability of the high-conductivity TaSi2/n+ poly-Si gate MOS structure
Author:
Appeared in: Microelectronics journal
Paging: Volume 13 () nr. 1 pages 43
Year: 1982
Contents:
Publisher: Mackintosh Publications Ltd., Luton
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 29 of 68 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands