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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
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Details for article 33 of 67 found articles
| Title: |
Measurement of the lattice constant of Si-Ge hetero-epitaxial layers grown on a silicon substrate |
| Author: | |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 11 (1980) nr. 4 pages 1 p. |
| Year: |
1980 |
| Contents: | |
| Publisher: |
Mackintosh Publications Ltd., Luton |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 33 of 67 found articles
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