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Journal description
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Details for article 32 of 66 found articles
| Title: |
Mechanical stress simulation during gate formation of MOS devices considering crystallization-induced stress of phosphorus-doped silicon thin films |
| Author: |
Miura, Hideo Saito, Naoto Okamoto, Noriaki |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 26 (1995) nr. 2-3 pages 5 p. |
| Year: |
1995 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 32 of 66 found articles
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