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  Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing
 
 
Title: Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing
Author: Chiu, C.J.
Pei, Z.W.
Chang, S.T.
Chang, S.P.
Chang, S.J.
Appeared in: Vacuum
Paging: Volume 86 (2011) nr. 3 pages 4 p.
Year: 2011
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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 Koninklijke Bibliotheek - National Library of the Netherlands