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                                       Details for article 28 of 69 found articles
 
 
  Highly moisture-resistive silicon nitride films prepared by catalytic chemical vapor deposition and application to gallium arsenide field-effect transistors
 
 
Title: Highly moisture-resistive silicon nitride films prepared by catalytic chemical vapor deposition and application to gallium arsenide field-effect transistors
Author: Masuda, Atsushi
Totsuka, Masahiro
Oku, Tomoki
Hattori, Ryo
Matsumura, Hideki
Appeared in: Vacuum
Paging: Volume 74 (2004) nr. 3-4 pages 5 p.
Year: 2004
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 28 of 69 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands