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Journal description
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Details for article 217 of 250 found articles
| Title: |
The influence of ion current density and target temperature on kinetics of accumulation of radiation defects at ion bombardment and on electrophysical properties of silicon doped by implantation of boron and phosphorus |
| Author: | |
| Appeared in: |
Vacuum |
| Paging: | Volume 25 (1975) nr. 4 pages 1 p. |
| Year: |
1975 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 217 of 250 found articles
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