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Growth of low resistivity p-type 4H-SiC single crystals by physical vapor transport using a novel crucible structure |
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Titel: |
Growth of low resistivity p-type 4H-SiC single crystals by physical vapor transport using a novel crucible structure |
Auteur: |
Han, Wenhao Zhong, Guanglei Xie, Xuejian Chen, Xiufang Yu, Wancheng Yang, Xianglong Sun, Li Qin, Chengjin Fu, Zhenxing Xiong, Xixi Shao, Hongyu Hu, Xiaobo Xu, Xiangang |
Verschenen in: |
Vacuum |
Paginering: |
Jaargang 240 () nr. C pagina's p. |
Jaar: |
2025 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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