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                                       Details for article 105 of 109 found articles
 
 
  131. Thermal annealing of inversion silicon layers doped by nitrogen and characteristics of p-n junctions
 
 
Title: 131. Thermal annealing of inversion silicon layers doped by nitrogen and characteristics of p-n junctions
Author:
Appeared in: Vacuum
Paging: Volume 23 (1973) nr. 2 pages 1 p.
Year: 1973
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 105 of 109 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands