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Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties |
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Titel: |
Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties |
Auteur: |
Ji, Xueqiang Yue, Jianying Qi, Xiaohui Yan, Zuyong Li, Shan Lu, Chao Li, Zhitong Liu, Zeng Qi, Song Yan, Xu Wang, Jinjin Wang, Shuang Li, Peigang Tang, Weihua |
Verschenen in: |
Vacuum |
Paginering: |
Jaargang 210 () nr. C pagina's p. |
Jaar: |
2023 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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