|
Ni/GeOx/p + Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling |
|
|
|
Titel: |
Ni/GeOx/p + Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling |
Auteur: |
Lee, Jae Yoon Kim, Youngmin Kim, Min-Hwi Go, Seoyeon Ryu, Seung Wook Lee, Jae Yeon Ha, Tae Jung Kim, Soo Gil Cho, Seongjae Park, Byung-Gook |
Verschenen in: |
Vacuum |
Paginering: |
Jaargang 161 (2019) nr. C pagina's 63-70 |
Jaar: |
2019 |
Inhoud: |
|
Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
|
|
|
|