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                                       Details for article 50 of 134 found articles
 
 
  828. Growth of epitaxial silicon layers by vacuum evaporation. I. Experimental procedure and initial assessment
 
 
Title: 828. Growth of epitaxial silicon layers by vacuum evaporation. I. Experimental procedure and initial assessment
Author:
Appeared in: Vacuum
Paging: Volume 14 (1964) nr. 8 pages 1 p.
Year: 1964
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 50 of 134 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands