Potential-induced degradation of Cu(In,Ga)Se2 can occur by shunting the front i-ZnO and by damaging the p-n junction
Titel:
Potential-induced degradation of Cu(In,Ga)Se2 can occur by shunting the front i-ZnO and by damaging the p-n junction
Auteur:
Muzzillo, Christopher P. Terwilliger, Kent Hacke, Peter Moutinho, Helio R. Young, Matthew R. Glynn, Stephen Stevens, Bart Repins, Ingrid L. Mansfield, Lorelle M.