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                                       Details for article 5 of 17 found articles
 
 
  A voltage-transient method for characterizing traps in GaN HEMTs
 
 
Title: A voltage-transient method for characterizing traps in GaN HEMTs
Author: Zheng, Xiang
Feng, Shiwei
Gao, Yifu
Zhang, Yamin
Jia, Yunpeng
Pan, Shijie
Appeared in: Microelectronics reliability
Paging: Volume 93 (2019) nr. C pages 57-60
Year: 2019
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 17 found articles
 
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