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Details for article 79 of 127 found articles
| Title: |
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery |
| Author: |
Ivo, Ponky Cho, Eunjung Melanie Kotara, Przemyslaw Schellhase, Lars Lossy, Richard Zeimer, Ute Mogilatenko, Anna Würfl, Joachim Tränkle, Günther Glowacki, Arkadiusz Boit, Christian |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 54 (2014) nr. 6-7 pages 5 p. |
| Year: |
2014 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 79 of 127 found articles
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