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Journal description
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Details for article 14 of 32 found articles
| Title: |
Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing |
| Author: |
Lei, Y.M. Wakabayashi, H. Tsutsui, K. Iwai, H. Furuhashi, M. Tomohisa, S. Yamakawa, S. Kakushima, K. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 84 (2018) nr. C pages 226-229 |
| Year: |
2018 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 14 of 32 found articles
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