|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 10 of 66 found articles
| Title: |
Direct observation of changes in the effective minority-carrier lifetime of SiN x -passivated n-type crystalline-silicon substrates caused by potential-induced degradation and recovery tests |
| Author: |
Nishikawa, Naoyuki Yamaguchi, Seira Ohdaira, Keisuke |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 79 (2017) nr. C pages 5 p. |
| Year: |
2017 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 10 of 66 found articles
| << previous | next >> |