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                                       Details for article 55 of 97 found articles
 
 
  Nature of an oxide layer thermally grown on silicon and determination of its thickness, both from the infra-red properties
 
 
Title: Nature of an oxide layer thermally grown on silicon and determination of its thickness, both from the infra-red properties
Author:
Appeared in: Microelectronics reliability
Paging: Volume 7 (1968) nr. 4 pages 1 p.
Year: 1968
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 55 of 97 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands