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  A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs)
 
 
Title: A 2D compact model for lightly doped DG MOSFETs (P-DGFETs) including negative bias temperature instability (NBTI) and short channel effects (SCEs)
Author: Samy, Omnia
Abdelhamid, Hamdy
Ismail, Yehea
Zekry, Abdelhalim
Appeared in: Microelectronics reliability
Paging: Volume 67 (2016) nr. C pages 82-88
Year: 2016
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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