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Journal description
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Details for article 35 of 46 found articles
| Title: |
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
| Author: |
Chen, J. Wakabayashi, H. Tsutsui, K. Iwai, H. Kakushima, K. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 63 (2016) nr. C pages 4 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 35 of 46 found articles
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