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                                       Details for article 16 of 27 found articles
 
 
  Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs
 
 
Title: Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs
Author: Swain, Sanjit Kumar
Dutta, Arka
Adak, Sarosij
Pati, Sudhansu Kumar
Sarkar, Chandan Kumar
Appeared in: Microelectronics reliability
Paging: Volume 61 (2016) nr. C pages 6 p.
Year: 2016
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 16 of 27 found articles
 
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