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                                       Details for article 4 of 22 found articles
 
 
  A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors
 
 
Title: A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors
Author: Wang, Weiliang
Khan, Karim
Zhang, Xingye
Qin, Haiming
Jiang, Jun
Miao, Lijing
Jiang, Kemin
Wang, Pengjun
Dai, Mingzhi
Chu, Junhao
Appeared in: Microelectronics reliability
Paging: Volume 60 (2016) nr. C pages 3 p.
Year: 2016
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 22 found articles
 
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