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Journal description
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Details for article 1 of 22 found articles
| Title: |
Active defects in MOS devices on 4H-SiC: A critical review |
| Author: |
Amini Moghadam, Hamid Dimitrijev, Sima Han, Jisheng Haasmann, Daniel |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 60 (2016) nr. C pages 9 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 22 found articles
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