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                                       Details for article 31 of 90 found articles
 
 
  Effect of ferroelectric polarization on insulated-gate thin-film transistor parameters
 
 
Title: Effect of ferroelectric polarization on insulated-gate thin-film transistor parameters
Author:
Appeared in: Microelectronics reliability
Paging: Volume 6 (1967) nr. 2 pages 1 p.
Year: 1967
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 31 of 90 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands