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                                       Details for article 10 of 29 found articles
 
 
  Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor
 
 
Title: Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor
Author: Sato, Soshi
Yamabe, Kikuo
Endoh, Tetsuo
Niwa, Masaaki
Appeared in: Microelectronics reliability
Paging: Volume 58 (2016) nr. C pages 7 p.
Year: 2016
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 29 found articles
 
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