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Journal description
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Details for article 10 of 32 found articles
| Title: |
Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN |
| Author: |
Arehart, A.R. Sasikumar, A. Via, G.D. Poling, B. Heller, E.R. Ringel, S.A. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 56 (2016) nr. C pages 4 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 10 of 32 found articles
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