Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs
Titel:
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs
Auteur:
Bisi, D. Stocco, A. Rossetto, I. Meneghini, M. Rampazzo, F. Chini, A. Soci, F. Pantellini, A. Lanzieri, C. Gamarra, P. Lacam, C. Tordjman, M. di Forte-Poisson, M.-A. De Salvador, D. Bazzan, M. Meneghesso, G. Zanoni, E.