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Journal description
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Details for article 3 of 25 found articles
| Title: |
A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric |
| Author: |
Huang, Y. Xu, J.P. Wang, L.S. Zhu, S.Y. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 55 (2015) nr. 2 pages 5 p. |
| Year: |
2015 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 25 found articles
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