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                                       Details for article 12 of 21 found articles
 
 
  Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing
 
 
Title: Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing
Author: Pomeroy, J.W.
Uren, M.J.
Lambert, B.
Kuball, M.
Appeared in: Microelectronics reliability
Paging: Volume 55 (2015) nr. 12PA pages 6 p.
Year: 2015
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 21 found articles
 
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