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                                       Details for article 29 of 38 found articles
 
 
  N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator
 
 
Title: N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator
Author: Chiu, Hsien-Chin
Wu, Chia-Hsuan
Chi, Ji-Fan
Chyi, J.-I.
Lee, G.-Y.
Appeared in: Microelectronics reliability
Paging: Volume 55 (2015) nr. 1 pages 4 p.
Year: 2015
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 29 of 38 found articles
 
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