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                                       Details for article 50 of 54 found articles
 
 
  Temperature dependences of threshold voltage and drain-induced barrier lowering in 60nm gate length MOS transistors
 
 
Title: Temperature dependences of threshold voltage and drain-induced barrier lowering in 60nm gate length MOS transistors
Author: Chen, Zehua
Wong, Hei
Han, Yan
Dong, Shurong
Yang, B.L.
Appeared in: Microelectronics reliability
Paging: Volume 54 (2014) nr. 6-7 pages 6 p.
Year: 2014
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 50 of 54 found articles
 
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