New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery
Titel:
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100nm scale unpassivated regions around the gate periphery
Auteur:
Ivo, Ponky Cho, Eunjung Melanie Kotara, Przemyslaw Schellhase, Lars Lossy, Richard Zeimer, Ute Mogilatenko, Anna Würfl, Joachim Tränkle, Günther Glowacki, Arkadiusz Boit, Christian