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                                       Details for article 4 of 20 found articles
 
 
  A novel partial-SOI LDMOSFET (>800V) with n-type floating buried layer in substrate
 
 
Title: A novel partial-SOI LDMOSFET (>800V) with n-type floating buried layer in substrate
Author: Xia, Chao
Cheng, Xinhong
Wang, Zhongjian
Cao, Duo
Jia, Tingting
Zheng, Li
Yu, Yuehui
Shen, Dashen
Appeared in: Microelectronics reliability
Paging: Volume 54 (2014) nr. 3 pages 5 p.
Year: 2014
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 20 found articles
 
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