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  A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs
 
 
Title: A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs
Author: Goel, N.
Joshi, K.
Mukhopadhyay, S.
Nanaware, N.
Mahapatra, S.
Appeared in: Microelectronics reliability
Paging: Volume 54 (2014) nr. 3 pages 29 p.
Year: 2014
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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