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                                       Details for article 6 of 23 found articles
 
 
  High temperature bias-stress-induced instability in power trench-gated MOSFETs
 
 
Title: High temperature bias-stress-induced instability in power trench-gated MOSFETs
Author: Hao, J.
Rioux, M.
Suliman, S.A.
Awadelkarim, O.O.
Appeared in: Microelectronics reliability
Paging: Volume 54 (2014) nr. 2 pages 374-380
Year: 2014
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 23 found articles
 
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