|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 17 of 24 found articles
| Title: |
Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity |
| Author: |
Liu, Hongxia Wang, Shulong Hao, Yue |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 51 (2011) nr. 5 pages 5 p. |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 17 of 24 found articles
| << previous | next >> |